| PART |
Description |
Maker |
| A122012 A1221 A1222 |
The A1220, A1221, A1222, and A1223 Hall-effect sensor ICs are extremely temperature-stable and stress-resistant devices especially suited for operation over extended temperature ranges to 150°C.
|
Allegro MicroSystems
|
| MPXHZ6117AC6T1 MPXHZ6117AC6U MPXHZ6117A MPXHZ6117A |
Media Resistant Integrated Silicon Pressure Sensor for Measuring Absolute Pressure,On-Chip Signal Conditioned,Temperature Compensated and Calibrated
|
Freescale Semiconductor, Inc
|
| PV6-38R-E PV6-10R PV6-14R PV6-56R PV6-8R PV6-12R |
6 BARREL V NYL INSULATED RING TONGUE 340 8.64 MAX WIRE INSUL DIAMETER
|
PANDUIT CORP.
|
| 567UVG010MFBJ 187UVG016MFBJ |
High temperature ?Very Low ESR ?High ripple current ?stable with temperature ?High frequency
|
Illinois Capacitor, Inc...
|
| PULSE-VALVES-9-99 |
High-performance media resistant soleniod valves
|
Sensortechnics GmbH
|
| MPXAZ4115A |
Media Resistant,Integrated Silicon Pressure Sensor for Manifold Absolute Pressure,Altemeter or Barometer Applications On-Chip Signal Conditioned
From old datasheet system
MPXAZ4115A Media Resistant, Integrated Silicon Pressure Sensor for Manifold Absolute Pressure, Altimeter or Barometer Applications On-Chip Signal Conditioned, Temperature Compensated, and Calibrated
|
Motorola, Inc.
|
| PN18-6LF-C PV14-10LFN-C |
TERM LOCK/FORK NYL 22-18AWG #6 COPPER ALLOY, TIN FINISH, FORK TERMINAL
|
Panduit, Corp.
PANDUIT CORP
|
| FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| W0603HT-01-100R-G W0603HT-01-100R-J W1206HT-01-100 |
High Temperature TaNFilm㈢ Chip Resistors
High Temperature TaNFilm垄莽 Chip Resistors
High Temperature TaNFilm? Chip Resistors
High Temperature TaNFilmChip Resistors RESISTOR, METAL FILM, 0.1 W, 1 %, 100 ppm, 100 ohm, SURFACE MOUNT, 0805
High Temperature TaNFilmChip Resistors RESISTOR, METAL FILM, 0.0625 W, 5 %, 100 ppm, 100 ohm, SURFACE MOUNT, 0603
High Temperature TaNFilmChip Resistors RESISTOR, METAL FILM, 0.125 W, 2 %, 100 ppm, 100 ohm, SURFACE MOUNT, 1206
|
Welwyn Components Limited
TT Electronics / Welwyn
Welwyn Components, Ltd.
Welwyn Components Limit...
|
| C1206C105K3NACTU |
Ceramic, 150C-(CxxxxC), 1 uF, 10%, 25 V, 1206, X8L, SMD, MLCC, High Temperature, Temperature Stable
|
Kemet Corporation
|
|
